Invention Grant
- Patent Title: Semiconductor laser pumped solid-state laser device
- Patent Title (中): 半导体激光泵浦固态激光器件
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Application No.: US13004473Application Date: 2011-01-11
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Publication No.: US08223813B2Publication Date: 2012-07-17
- Inventor: Masaki Tsunekane , Takunori Taira
- Applicant: Masaki Tsunekane , Takunori Taira
- Applicant Address: JP
- Assignee: Inter-University Research Institute Corporation, National Institutes of Natural Sciences
- Current Assignee: Inter-University Research Institute Corporation, National Institutes of Natural Sciences
- Current Assignee Address: JP
- Agency: Bacon and Thomas, PLLC
- Priority: JP2010-006562 20100115
- Main IPC: H01S3/04
- IPC: H01S3/04

Abstract:
A compact semiconductor laser pumped solid-state laser device is provided that can suppress unnecessary parasitic oscillation in a microchip and efficiently extract energy. The semiconductor laser pumped solid-state laser device comprises: a solid-state laser core 1 disposed in the center and formed of a laser medium containing neodymium (Nd) as a laser oscillation element; a light guide region 2 integrally formed around the solid-state laser core 1, having approximately rectangular shape with four linear light entrance windows formed on the outer periphery thereof, and containing samarium (Sm) as a laser oscillation element; and a heat sink 4 disposed on one face of the light guide region 2 including the solid-state core 1, wherein laser oscillation is performed by introducing a pumping light 14 through the light entrance windows 3 and propagating the pumping light 14 through the light guide region 2 to pump the solid-state laser core 1, and wherein a laser oscillation light is extracted from the upper face of the solid-state laser core 1 opposite to the face contacting the heat sink 4.
Public/Granted literature
- US20110176566A1 SEMICONDUCTOR LASER PUMPED SOLID-STATE LASER DEVICE Public/Granted day:2011-07-21
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