Invention Grant
- Patent Title: Semiconductor laser
- Patent Title (中): 半导体激光器
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Application No.: US12888670Application Date: 2010-09-23
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Publication No.: US08223814B2Publication Date: 2012-07-17
- Inventor: Hisayoshi Kuramochi , Tomonori Hino , Tatsuhiro Hirata , Yuta Yoshida
- Applicant: Hisayoshi Kuramochi , Tomonori Hino , Tatsuhiro Hirata , Yuta Yoshida
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2009-228038 20090930
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
The present invention provides a semiconductor laser realizing reduced possibility that a wiring layer disposed in the air is broken even under severe environment of a large temperature difference. A trench is provided between adjacent ridges, and a wiring layer electrically connecting an upper electrode and a pad electrode is disposed in the air at least above the trench. The wiring layer in a portion above the trench has a flat shape or a concave shape which dents toward the trench. With the configuration, accumulation of strains in the wiring layer when the wiring layer repeats expansion and shrink under severe environment of a large temperature difference is suppressed.
Public/Granted literature
- US20110075693A1 SEMICONDUCTOR LASER Public/Granted day:2011-03-31
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