Invention Grant
- Patent Title: Substrate structure and manufacturing method
- Patent Title (中): 基板结构及制造方法
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Application No.: US12713184Application Date: 2010-02-26
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Publication No.: US08224143B2Publication Date: 2012-07-17
- Inventor: Shin Masuda , Kazunori Shiota , Atsushi Seki
- Applicant: Shin Masuda , Kazunori Shiota , Atsushi Seki
- Applicant Address: JP Tokyo
- Assignee: Advantest Corporation
- Current Assignee: Advantest Corporation
- Current Assignee Address: JP Tokyo
- Agency: Jianq Chyun IP Office
- Main IPC: G02B6/10
- IPC: G02B6/10 ; B32B9/04 ; B05D5/06 ; H01L21/00

Abstract:
Provided is a substrate structure and a manufacturing method thereof, the substrate structure including a base substrate of single crystal; and a rhombohedral ferroelectric thin film exhibiting a spontaneous ferroelectric polarization and of a perovskite structure, the ferroelectric thin film being formed on a surface of the base substrate. The substrate structure may further include an optical waveguide formed on the ferroelectric thin film; and an electric field applying section that applies, to the optical waveguide, an electric field parallel to a surface of the base substrate. The electric field applying section generates the electric field so that the electric field direction of the electric field applied to the optical waveguide is parallel to a direction of the spontaneous ferroelectric polarization of the ferroelectric thin film.
Public/Granted literature
- US20110195274A1 SUBSTRATE STRUCTURE AND MANUFACTURING METHOD Public/Granted day:2011-08-11
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