Invention Grant
US08225042B1 Method and apparatus for preventing foreground erase operations in electrically writable memory devices
有权
用于防止电可写存储器件中的前景擦除操作的方法和装置
- Patent Title: Method and apparatus for preventing foreground erase operations in electrically writable memory devices
- Patent Title (中): 用于防止电可写存储器件中的前景擦除操作的方法和装置
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Application No.: US12435986Application Date: 2009-05-05
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Publication No.: US08225042B1Publication Date: 2012-07-17
- Inventor: John Rudelic , Lance Dover
- Applicant: John Rudelic , Lance Dover
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Berkeley Law & Technology Group, LLP
- Main IPC: G06F13/14
- IPC: G06F13/14
Abstract:
Methods and systems are provided that may include a nonvolatile memory to store information, where the nonvolatile memory has a memory cache to store data corresponding to a received sector write operation, and a main memory comprising at least the designated memory block and a second memory block. A controller may reclaim at least one sector of the designated memory block and performing a write operation to write information from the memory cache in response to the received sector write operation to at least one sector of the second memory block.
Information query
