Invention Grant
US08225149B2 Semiconductor testing apparatus and method 有权
半导体测试仪器及方法

Semiconductor testing apparatus and method
Abstract:
The present invention provides a semiconductor testing apparatus and method capable of reliably determining whether a semiconductor memory is good or bad. A “1” reading test of each cell corresponding to one bit at a first step is first performed on a memory cell array. “0” writing of each cell corresponding to one bit at a second step and a “0” reading test of each cell corresponding to one bit at a third step are executed on the memory cell array. Thus, the time taken from the supply of power to the start of the “0” reading test of the reference cell at the third step can be significantly shortened. As a result, a defect of a reference bit line due to a breaking or high resistance of a gate of a reference column switch transistor corresponding to a normally ON transistor can be screened.
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