A semiconductor memory device includes a data storage area wherein a plurality of data cells, respectively storing one bit of data, is arranged in a lattice form, a redundant data storage area that stores one bit parity data, the one bit parity data corresponding respectively to a line of data read out of the data storage area as a data group, a first switch section that receives a data group read out from the data storage area and a parity data bit, and a composite unit that receives an output of the first switch section and that generates correction data for the read data group, as based upon defect position information of the data storage area. The first switch section is selectively controlled to provide the parity data bit associated with the read data group as an input into the composite unit based on the defect position information.