Invention Grant
- Patent Title: Highly compact non-volatile memory and method thereof
- Patent Title (中): 高度紧凑的非易失性存储器及其方法
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Application No.: US12274959Application Date: 2008-11-20
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Publication No.: US08225242B2Publication Date: 2012-07-17
- Inventor: Raul-Adrian Cernea
- Applicant: Raul-Adrian Cernea
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Davis Wright Tremaine LLP
- Main IPC: G50F17/50
- IPC: G50F17/50

Abstract:
A non-volatile memory device capable of reading and writing a large number of memory cells with multiple read/write circuits in parallel has an architecture that reduces redundancy in the multiple read/write circuits to a minimum. The multiple read/write circuits are organized into a bank of similar stacks of components. In one aspect, each stack of components has individual components factorizing out their common subcomponents that do not require parallel usage and sharing them as a common component serially. Other aspects, include serial bus communication between the different components, compact I/O enabled data latches associated with the multiple read/write circuits, and an architecture that allows reading and programming of a contiguous row of memory cells or a segment thereof. The various aspects combined to achieve high performance, high accuracy and high compactness.
Public/Granted literature
- US20090086543A1 Highly Compact Non-Volatile Memory And Method Thereof Public/Granted day:2009-04-02
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