Invention Grant
- Patent Title: Method of manufacturing magnetoresistive element having a pair of free layers
- Patent Title (中): 制造具有一对自由层的磁阻元件的方法
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Application No.: US12732795Application Date: 2010-03-26
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Publication No.: US08225489B2Publication Date: 2012-07-24
- Inventor: Daisuke Miyauchi , Takahiko Machita , Keita Kawamori
- Applicant: Daisuke Miyauchi , Takahiko Machita , Keita Kawamori
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Main IPC: G11B5/127
- IPC: G11B5/127 ; H04R31/00

Abstract:
An MR element includes a first exchange coupling shield layer, an MR stack, and a second exchange coupling shield layer that are arranged in this order from the bottom, and a nonmagnetic layer surrounding the MR stack. The MR stack includes a first free layer, a spacer layer, a second free layer, and a magnetic cap layer that are arranged in this order from the bottom. In the step of forming the MR stack and the nonmagnetic layer, a protection layer is formed on a layered film that will be the MR stack later, and a mask is then formed on the protection layer. Next, the layered film and the protection layer are etched using the mask and then the nonmagnetic layer is formed. After removal of the mask, the protection layer is removed by wet etching.
Public/Granted literature
- US20110232079A1 METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT HAVING A PAIR OF FREE LAYERS Public/Granted day:2011-09-29
Information query
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