Invention Grant
- Patent Title: Epoxysilane hole blocking layer photoconductors
- Patent Title (中): 环氧硅烷空穴阻挡层感光体
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Application No.: US12511128Application Date: 2009-07-29
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Publication No.: US08227155B2Publication Date: 2012-07-24
- Inventor: Jin Wu , Sherri A Toates , J. Robinson Cowdery-Corvan , Mark Muscato , Richard A Williams , Marc J Livecchi , Linda L Ferrarese
- Applicant: Jin Wu , Sherri A Toates , J. Robinson Cowdery-Corvan , Mark Muscato , Richard A Williams , Marc J Livecchi , Linda L Ferrarese
- Applicant Address: US CT Norwalk
- Assignee: Xerox Corporation
- Current Assignee: Xerox Corporation
- Current Assignee Address: US CT Norwalk
- Agent Eugene O. Palazzo
- Main IPC: G03G5/14
- IPC: G03G5/14
Abstract:
A photoconductor that includes, for example, a substrate, an optional ground plane layer, an undercoat layer thereover, wherein the undercoat layer contains an aminosilane and an epoxysilane, a photogenerating layer, and at least one charge transport layer.
Public/Granted literature
- US20110027705A1 EPOXYSILANE HOLE BLOCKING LAYER PHOTOCONDUCTORS Public/Granted day:2011-02-03
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