Invention Grant
US08227268B2 Methods of fabricating group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
有权
制备具有量子阱和超晶格的III族氮化物基发光二极管结构的方法，基于III族氮化物的量子阱结构和基于III族氮化物的超晶格结构
- Patent Title: Methods of fabricating group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
- Patent Title (中): 制备具有量子阱和超晶格的III族氮化物基发光二极管结构的方法，基于III族氮化物的量子阱结构和基于III族氮化物的超晶格结构
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Application No.: US11875353Application Date: 2007-10-19
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Publication No.: US08227268B2Publication Date: 2012-07-24
- Inventor: David Todd Emerson , James Ibbetson , Michael John Bergmann , Kathleen Marie Doverspike , Michael John O'Loughlin , Howard Dean Nordby, Jr. , Amber Christine Abare
- Applicant: David Todd Emerson , James Ibbetson , Michael John Bergmann , Kathleen Marie Doverspike , Michael John O'Loughlin , Howard Dean Nordby, Jr. , Amber Christine Abare
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well stricture. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0≦X
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