Invention Grant
US08227301B2 Semiconductor device structures with floating body charge storage and methods for forming such semiconductor device structures
有权
具有浮体电荷存储的半导体器件结构和用于形成这种半导体器件结构的方法
- Patent Title: Semiconductor device structures with floating body charge storage and methods for forming such semiconductor device structures
- Patent Title (中): 具有浮体电荷存储的半导体器件结构和用于形成这种半导体器件结构的方法
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Application No.: US12634137Application Date: 2009-12-09
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Publication No.: US08227301B2Publication Date: 2012-07-24
- Inventor: Brent A. Anderson , Edward J. Nowak
- Applicant: Brent A. Anderson , Edward J. Nowak
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Wood, Herron & Evans, LLP
- Agent Anthony J. Canale
- Main IPC: H01L23/49
- IPC: H01L23/49
Abstract:
Semiconductor device structures including a semiconductor body that is partially depleted to define a floating charge-neutral region supplying a floating body for charge storage and methods for forming such semiconductor device structures. The width of the semiconductor body is modulated so that different sections of the body have different widths. When electrically biased, the floating charge-neutral region at least partially resides in the wider section of the semiconductor body.
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