Localized compressive strained semiconductor

Invention Grant

US08227309B2 Localized compressive strained semiconductor 失效

Title translation: 局部压应变半导体

Please log in to see more content

Patent Title: Localized compressive strained semiconductor
Patent Title (中): 局部压应变半导体
Application No.: US13357296

Application Date: 2012-01-24
Publication No.: US08227309B2

Publication Date: 2012-07-24
Inventor: Leonard Forbes
Applicant: Leonard Forbes
Applicant Address: US ID Boise
Assignee: Micron Technology, Inc.
Current Assignee: Micron Technology, Inc.
Current Assignee Address: US ID Boise
Agency: Schwegman, Lundberg & Woessner, P.A.
Main IPC: H01L21/8238
IPC: H01L21/8238

Localized compressive strained semiconductor

Abstract:

One aspect of the present subject matter relates to a method for forming strained semiconductor film. According to an embodiment of the method, a crystalline semiconductor bridge is formed over a substrate. The bridge has a first portion bonded to the substrate, a second portion bonded to the substrate, and a middle portion between the first and second portions separated from the substrate. The middle portion of the bridge is bonded to the substrate to provide a compressed crystalline semiconductor layer on the substrate. Other aspects are provided herein.

Abstract(Chinese):

本发明的一个方面涉及形成应变半导体膜的方法。根据该方法的一个实施例，在衬底上形成结晶半导体桥。该桥具有结合到基板的第一部分，与该基板接合的第二部分，以及与基板分离的第一和第二部分之间的中间部分。桥的中间部分结合到衬底上，以在衬底上提供压缩的晶体半导体层。本文提供了其他方面。

Public/Granted literature

US20120122287A1 LOCALIZED COMPRESSIVE STRAINED SEMICONDUCTOR Public/Granted day:2012-05-17

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS