Semiconductor device and manufacturing method of the same

Invention Grant

US08227314B2 Semiconductor device and manufacturing method of the same 失效

Title translation: 半导体器件及其制造方法相同

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Patent Title: Semiconductor device and manufacturing method of the same
Patent Title (中): 半导体器件及其制造方法相同
Application No.: US13330082

Application Date: 2011-12-19
Publication No.: US08227314B2

Publication Date: 2012-07-24
Inventor: Hideki Mori
Applicant: Hideki Mori
Applicant Address: JP Tokyo
Assignee: Sony Corporation
Current Assignee: Sony Corporation
Current Assignee Address: JP Tokyo
Agency: SNR Denton US LLP
Priority: JP2008-222810 20080829
Main IPC: H01L21/336
IPC: H01L21/336

Semiconductor device and manufacturing method of the same

Abstract:

A method of making a semiconductor device having an ESD protection element which can achieve compatibility between high drain-to-backgate withstand voltage and ESD protection of DMOSFET gates.

Abstract(Chinese):

一种制造具有ESD保护元件的半导体器件的方法，该ESD保护元件可以实现DMOSFET栅极的高漏极与栅极耐受电压和ESD保护之间的兼容性。

Public/Granted literature

US20120094452A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2012-04-19

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/336	......带有绝缘栅的