Invention Grant
- Patent Title: Method for producing a copper connection between two sides of a substrate
- Patent Title (中): 在基板的两面之间制造铜连接的方法
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Application No.: US12433033Application Date: 2009-04-30
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Publication No.: US08227340B2Publication Date: 2012-07-24
- Inventor: Uwe Seidel , Thorsten Obernhuber , Albert Birner , Georg Ehrentraut
- Applicant: Uwe Seidel , Thorsten Obernhuber , Albert Birner , Georg Ehrentraut
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/44 ; H01L21/461

Abstract:
A method for producing an electrically conductive connection between a first surface of a semiconductor substrate and a second surface of the semiconductor substrate includes producing a hole, forming an electrically conductive layer that includes tungsten, removing the electrically conductive layer from the first surface of the semiconductor substrate, filling the hole with copper and thinning the semiconductor substrate. The hole is produced from the first surface of the semiconductor substrate into the semiconductor substrate. The electrically conductive layer is removed from the first surface of the semiconductor substrate, wherein the electrically conductive layer remains at least with reduced thickness in the hole. The semiconductor substrate is thinned starting from a surface, which is an opposite surface of the first surface of the semiconductor substrate, to obtain the second surface of the semiconductor substrate with the hole being uncovered at the second surface of the semiconductor substrate.
Public/Granted literature
- US20100279503A1 Method for Producing an Electrically Conductive Connection Public/Granted day:2010-11-04
Information query
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