Invention Grant
US08227351B2 Fabrication of magnetic tunnel junction (MTJ) devices with reduced surface roughness for magnetic random access memory (MRAM)
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磁性随机存取存储器（MRAM）的表面粗糙度降低的磁隧道结（MTJ）器件的制造
- Patent Title: Fabrication of magnetic tunnel junction (MTJ) devices with reduced surface roughness for magnetic random access memory (MRAM)
- Patent Title (中): 磁性随机存取存储器（MRAM）的表面粗糙度降低的磁隧道结（MTJ）器件的制造
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Application No.: US12728294Application Date: 2010-03-22
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Publication No.: US08227351B2Publication Date: 2012-07-24
- Inventor: Xia Li
- Applicant: Xia Li
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Sam Talpalatsky; Nicholas J. Pauley; Jonathan T. Velasco
- Main IPC: H01L21/311
- IPC: H01L21/311
Abstract:
Reliability and yield of MTJ devices is improved by reducing surface roughness in the MTJ layers of the MTJ devices. Surface roughness is reduced by reducing surface roughness of layers below the MTJ layers such as the bottom electrode layer. Planarizing the bottom electrode layer through chemical mechanical polishing or etch back of spin-on material before depositing the MTJ layers decreases surface roughness of the bottom electrode layer and the MTJ layers. Alternatively, a capping layer may be planarized before deposition of the bottom electrode layer and MTJ layers to reduce surface roughness in the capping layer, the bottom electrode layer, and the MTJ layers.
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