Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
-
Application No.: US11893226Application Date: 2007-08-14
-
Publication No.: US08227353B2Publication Date: 2012-07-24
- Inventor: Takatsugu Omata , Koichiro Tanaka
- Applicant: Takatsugu Omata , Koichiro Tanaka
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2006-235522 20060831
- Main IPC: H01L21/326
- IPC: H01L21/326 ; H01L21/479 ; H01L21/00 ; G03F7/00

Abstract:
A technique for increasing productivity by simplified steps in a manufacturing process of TFTs, electronic circuits using TFTs, and semiconductor devices formed of TFTs is provided. A method for manufacturing a semiconductor device includes forming a light absorbing layer, forming a light-transmitting layer on the light absorbing layer emitting a linear laser beam with a homogenized energy onto a mask and thereby splitting the linear laser beam into a plurality of laser beams and emitting the plurality of laser beams onto the light-transmitting layer on the light absorbing layer, and thereby forming a plurality of openings in the light-transmitting layer and the light absorbing layer.
Public/Granted literature
- US20080057718A1 Method for manufacturing semiconductor device Public/Granted day:2008-03-06
Information query
IPC分类: