Invention Grant
- Patent Title: Multilayered circuit board and semiconductor device
- Patent Title (中): 多层电路板和半导体器件
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Application No.: US12593749Application Date: 2008-01-17
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Publication No.: US08227703B2Publication Date: 2012-07-24
- Inventor: Hironori Maruyama , Kensuke Nakamura , Toru Meura , Hiroshi Hirose
- Applicant: Hironori Maruyama , Kensuke Nakamura , Toru Meura , Hiroshi Hirose
- Applicant Address: JP Tokyo
- Assignee: Sumitomo Bakelite Company, Ltd.
- Current Assignee: Sumitomo Bakelite Company, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2007-097871 20070403; JP2007-188945 20070720
- International Application: PCT/JP2008/050524 WO 20080117
- International Announcement: WO2008/120481 WO 20081009
- Main IPC: H05K1/03
- IPC: H05K1/03

Abstract:
A multilayered circuit board of the present invention has a single-side laminated structure and does not include a core substrate having via-holes formed therethrough and vias for providing electrical connection through the via-holes. The multilayered circuit board includes a plurality of pairs of layers, each pair including a conductor circuit layer and an insulator layer, wherein a glass transition temperature of each insulator layer is 170° C. or higher, a coefficient of thermal expansion at the glass transition temperature or lower of each insulator layer is 35 ppm or less, and a modulus of elasticity of each insulator layer is 5 GPa or more.
Public/Granted literature
- US20100025093A1 MULTILAYERED CIRCUIT BOARD AND SEMICONDUCTOR DEVICE Public/Granted day:2010-02-04
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