Invention Grant
- Patent Title: Chalcogenide containing semiconductors with chalcogenide gradient
- Patent Title (中): 含硫族化合物的半导体与硫属化物梯度
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Application No.: US12944119Application Date: 2010-11-11
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Publication No.: US08227785B2Publication Date: 2012-07-24
- Inventor: Davide Erbetta
- Applicant: Davide Erbetta
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L29/04 ; H01L29/06 ; H01L21/00 ; H01L21/06
Abstract:
Chalcogenide containing semiconductor devices may be formed with a gradient film between a chalcogenide film and another film. The gradient film may have its chalcogenide concentration decrease as it extends away from the chalcogenide film, while the concentration of the other film material increases across the thickness of the gradient film moving away from the chalcogenide film.
Public/Granted literature
- US20120119177A1 Chalcogenide Containing Semiconductors with Chalcogenide Gradient Public/Granted day:2012-05-17
Information query
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