Invention Grant
- Patent Title: Semiconductor light-emitting device
- Patent Title (中): 半导体发光装置
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Application No.: US12619955Application Date: 2009-11-17
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Publication No.: US08227823B2Publication Date: 2012-07-24
- Inventor: Jung Hyeok Bae
- Applicant: Jung Hyeok Bae
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2008-0114616 20081118
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
The semiconductor light-emitting structure has a plurality of compound semiconductor layers; a current spreading layer comprising a multi-layered transparent electrode layer on the plurality of compound semiconductor layers and a metal layer between the transparent electrode layers; and a second electrode electrically connected to the current spreading layer.
Public/Granted literature
- US20100123166A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2010-05-20
Information query
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