Invention Grant
- Patent Title: Image sensor and method for manufacturing thereof
- Patent Title (中): 图像传感器及其制造方法
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Application No.: US12575292Application Date: 2009-10-07
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Publication No.: US08227843B2Publication Date: 2012-07-24
- Inventor: Jong-Man Kim
- Applicant: Jong-Man Kim
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2008-0099047 20081009
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L31/113
Abstract:
An image sensor and a method for manufacturing an image sensor. An image sensor may include a readout circuitry which may be formed on and/or over a first substrate. An image sensor may include an interlayer dielectric layer formed on and/or over a first substrate. An image sensor may include a metal line formed on and/or over an interlayer dielectric layer, and may include a top plug. An image sensor may include an image sensing device formed on and/or over a top plug. An image sensor may include a first conductive type ion implantation area formed on and/or over an area of an image sensing device corresponding to a top plug. Methods of manufacturing an image sensor are disclosed.
Public/Granted literature
- US20100090305A1 IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF Public/Granted day:2010-04-15
Information query
IPC分类:
