Invention Grant
- Patent Title: Semiconductor substrate and semiconductor device and manufacturing method of the same
- Patent Title (中): 半导体衬底和半导体器件及其制造方法相同
-
Application No.: US13168155Application Date: 2011-06-24
-
Publication No.: US08227866B2Publication Date: 2012-07-24
- Inventor: Tetsuya Kakehata
- Applicant: Tetsuya Kakehata
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2007-272297 20071019
- Main IPC: H01L27/01
- IPC: H01L27/01
Abstract:
A semiconductor substrate having an SOI layer is provided. Between an SOI layer and a glass substrate, a bonding layer is provided which is formed of one layer or a plurality of layers of phosphosilicate glass, borosilicate glass, and/or borophosphosilicate glass, using organosilane as one material by a thermal CVD method at a temperature of 500° C. to 800° C.
Public/Granted literature
- US20110248377A1 SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2011-10-13
Information query
IPC分类:
