Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12631308Application Date: 2009-12-04
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Publication No.: US08227871B2Publication Date: 2012-07-24
- Inventor: Choul Joo Ko
- Applicant: Choul Joo Ko
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: The Law Office of Andrew D. Fortney
- Agent Andrew D. Fortney
- Priority: KR10-2008-0122789 20081204
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/76
Abstract:
A semiconductor device and a method for manufacturing the same are disclosed. The semiconductor device includes a substrate having a first conductor-type, a buried layer of a second conductor-type on the substrate, a drain, and a first guard-ring on one side of the drain, a second guard-ring on one side of the first guard-ring, and a third guard-ring on one side of the second guard-ring.
Public/Granted literature
- US20100140703A1 Semiconductor Device and Method for Manufacturing the Same Public/Granted day:2010-06-10
Information query
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