Invention Grant
US08227921B1 Semiconductor package with increased I/O density and method of making same
有权
具有增加I / O密度的半导体封装及其制造方法
- Patent Title: Semiconductor package with increased I/O density and method of making same
- Patent Title (中): 具有增加I / O密度的半导体封装及其制造方法
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Application No.: US13290451Application Date: 2011-11-07
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Publication No.: US08227921B1Publication Date: 2012-07-24
- Inventor: Doo Hyun Park , Jae Yoon Kim , Yoon Ha Jung
- Applicant: Doo Hyun Park , Jae Yoon Kim , Yoon Ha Jung
- Applicant Address: US AZ Chandler
- Assignee: Amkor Technology, Inc.
- Current Assignee: Amkor Technology, Inc.
- Current Assignee Address: US AZ Chandler
- Agency: Stetina Brunda Garred & Brucker
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/12 ; H01L21/44
Abstract:
The present invention is related to a semiconductor package and method for fabricating the same wherein the semiconductor package includes a die pad having a semiconductor die mounted thereto, and two or more sets of leads or I/O pads which extend at least partially about the die pad in spaced relation thereto and to each other. The formation of the die pad and the leads of the leadframe are facilitated by the completion of multiple plating and chemical etching processes in a prescribed sequence. The present invention is further related to a semiconductor package and method for fabricating the same wherein the semiconductor package includes a semiconductor die electrically connected a plurality of leads or I/O pads via a flip chip type connection, each of the leads being formed by the completion of multiple plating and chemical etching processes in a prescribed sequence.
Information query
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