Invention Grant
US08228113B2 Power semiconductor module and method for operating a power semiconductor module
有权
功率半导体模块和用于操作功率半导体模块的方法
- Patent Title: Power semiconductor module and method for operating a power semiconductor module
- Patent Title (中): 功率半导体模块和用于操作功率半导体模块的方法
-
Application No.: US12914301Application Date: 2010-10-28
-
Publication No.: US08228113B2Publication Date: 2012-07-24
- Inventor: Daniel Domes
- Applicant: Daniel Domes
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102009046258 20091030
- Main IPC: H03K17/687
- IPC: H03K17/687

Abstract:
A power semiconductor module includes a normally on, controllable first power semiconductor switch including at least one first power semiconductor chip, and a normally off, controllable second power semiconductor switch including at least one second power semiconductor chip. The load paths of the first power semiconductor switch and of the second power semiconductor switch are connected in series. The control terminals of all first power semiconductor chips are permanently electrically conductively connected to a conductor track to which no load terminal of any of the first power semiconductor chips is permanently electrically conductively connected, and to which no load terminal and no control terminal of any of the second power semiconductor chips are permanently electrically conductively connected.
Public/Granted literature
- US20110102054A1 POWER SEMICONDUCTOR MODULE AND METHOD FOR OPERATING A POWER SEMICONDUCTOR MODULE Public/Granted day:2011-05-05
Information query
IPC分类: