Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12382678Application Date: 2009-03-20
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Publication No.: US08228158B2Publication Date: 2012-07-24
- Inventor: Hiroshi Tsuda
- Applicant: Hiroshi Tsuda
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2008-096918 20080403
- Main IPC: H01H85/04
- IPC: H01H85/04 ; H01L23/52 ; H01L23/62 ; H01L21/82 ; H01L21/44

Abstract:
A semiconductor device has a semiconductor substrate and a first electrical fuse and a second electrical fuse, which are provided on the semiconductor substrate. The first electrical fuse has a first upper layer wire and a first lower layer wire formed in different wire layers, and a via for connecting the first upper layer wire to the first lower layer wire. The second electrical fuse has a second upper layer wire and a second lower layer wire formed in different wire layers, and a via for connecting the second upper layer wire to the second lower layer wire. The semiconductor device has a connection portion for connecting the above described first upper layer wire of the first electrical fuse to the second lower layer wire of the second electrical fuse. The connection portion connects the first electrical fuse and the second electrical fuse in series.
Public/Granted literature
- US20090251275A1 Semiconductor device Public/Granted day:2009-10-08
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