Invention Grant
- Patent Title: Structures and methods for a field-reset spin-torque MRAM
- Patent Title (中): 现场复位自旋扭矩MRAM的结构和方法
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Application No.: US12789838Application Date: 2010-05-28
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Publication No.: US08228715B2Publication Date: 2012-07-24
- Inventor: Thomas Andre , Saied Tehrani , Jon Slaughter , Nicholas Rizzo
- Applicant: Thomas Andre , Saied Tehrani , Jon Slaughter , Nicholas Rizzo
- Applicant Address: US AZ Chandler
- Assignee: Everspin Technologies, Inc.
- Current Assignee: Everspin Technologies, Inc.
- Current Assignee Address: US AZ Chandler
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/14

Abstract:
An apparatus and method of programming a spin-torque magnetoresistive memory array includes a metal reset line positioned near each of a plurality of magnetoresistive bits and configured to set the plurality of magnetoresistive memory elements to a known state by generating a magnetic field when an electrical current flows through it. A spin torque transfer current is then applied to selected ones of the magnetoresistive bits to switch the selected bit to a programmed state. In another mode of operation, a resistance of the plurality of bits is sensed prior to generating the magnetic field. The resistance is again sensed after the magnetic field is generated and the data represented by the initial state of each bit is determined from the resistance change. A spin torque transfer current is then applied only to those magnetoresistive bits having a resistance different from prior to the magnetic field being applied.
Public/Granted literature
- US20110292714A1 STRUCTURES AND METHODS FOR A FIELD-RESET SPIN-TORQUE MRAM Public/Granted day:2011-12-01
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