Invention Grant
- Patent Title: Memory circuit and method for controlling memory circuit
- Patent Title (中): 用于控制存储器电路的存储器电路和方法
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Application No.: US12776441Application Date: 2010-05-10
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Publication No.: US08228752B2Publication Date: 2012-07-24
- Inventor: Hung-Yu Li , Wade Wang , Rick Zheng , James Ma , Kun-Ti Lee , Chia-Cheng Chen
- Applicant: Hung-Yu Li , Wade Wang , Rick Zheng , James Ma , Kun-Ti Lee , Chia-Cheng Chen
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: Faraday Technology Corp.
- Current Assignee: Faraday Technology Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
A memory circuit includes a first memory array, a second memory array and a switch module, wherein the first memory array has a first node and a second node, the second memory array has a third node and a fourth node, the first node is coupled to a first supply voltage, and the fourth supply voltage is coupled to a second supply voltage smaller than the first supply voltage. The switch module is coupled to the second node, the third node, the first supply voltage and the second supply voltage. When the memory circuit is operated under an inactive mode, the switch module electrically connects the second node to the third node, electrically disconnects the second node from the second supply voltage, and electrically disconnects the third node from the first supply voltage.
Public/Granted literature
- US20110273951A1 MEMORY CIRCUIT AND METHOD FOR CONTROLLING MEMORY CIRCUIT Public/Granted day:2011-11-10
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