Invention Grant
US08228965B2 Surface emitting laser, manufacturing method of surface emitting laser, surface emitting laser array, manufacturing method of surface emitting laser array, and optical apparatus including surface emitting laser array 有权
表面发射激光器,表面发射激光器的制造方法,表面发射激光器阵列,表面发射激光器阵列的制造方法和包括表面发射激光器阵列的光学装置

  • Patent Title: Surface emitting laser, manufacturing method of surface emitting laser, surface emitting laser array, manufacturing method of surface emitting laser array, and optical apparatus including surface emitting laser array
  • Patent Title (中): 表面发射激光器,表面发射激光器的制造方法,表面发射激光器阵列,表面发射激光器阵列的制造方法和包括表面发射激光器阵列的光学装置
  • Application No.: US13039400
    Application Date: 2011-03-03
  • Publication No.: US08228965B2
    Publication Date: 2012-07-24
  • Inventor: Tetsuya Takeuchi
  • Applicant: Tetsuya Takeuchi
  • Applicant Address: JP Tokyo
  • Assignee: Canon Kabushiki Kaisha
  • Current Assignee: Canon Kabushiki Kaisha
  • Current Assignee Address: JP Tokyo
  • Agency: Fitzpatrick, Cella, Harper & Scinto
  • Priority: JP2008-199000 20080731
  • Main IPC: H01S5/00
  • IPC: H01S5/00
Surface emitting laser, manufacturing method of surface emitting laser, surface emitting laser array, manufacturing method of surface emitting laser array, and optical apparatus including surface emitting laser array
Abstract:
A surface emitting laser which is configured by laminating on a substrate a lower reflection mirror, an active layer, and an upper reflection mirror, which includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a concave high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of λ, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, the multilayer film reflection mirror includes a phase adjusting layer which has an optical thickness in the range of λ/8 to 3λ/8 inclusive in a light emitting peripheral portion on the multilayer film reflection mirror, and an absorption layer causing band-to-band absorption is provided in the phase adjusting layer.
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