Invention Grant
- Patent Title: Electromechanical device configured to minimize stress-related deformation and methods for fabricating same
- Patent Title (中): 配置为最小化应力相关变形的机电装置及其制造方法
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Application No.: US12825214Application Date: 2010-06-28
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Publication No.: US08229253B2Publication Date: 2012-07-24
- Inventor: Fan Zhong , Lior Kogut
- Applicant: Fan Zhong , Lior Kogut
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee Address: US CA San Diego
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: G02F1/01
- IPC: G02F1/01

Abstract:
Embodiments of MEMS devices include a movable layer supported by overlying support structures, and may also include underlying support structures. In one embodiment, the residual stresses within the overlying support structures and the movable layer are substantially equal. In another embodiment, the residual stresses within the overlying support structures and the underlying support structures are substantially equal. In certain embodiments, substantially equal residual stresses are be obtained through the use of layers made from the same materials having the same thicknesses. In further embodiments, substantially equal residual stresses are obtained through the use of support structures and/or movable layers which are mirror images of one another.
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