Invention Grant
- Patent Title: Method for controlling non-volatile semiconductor memory system
- Patent Title (中): 用于控制非易失性半导体存储器系统的方法
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Application No.: US11931101Application Date: 2007-10-31
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Publication No.: US08230156B2Publication Date: 2012-07-24
- Inventor: Yoshiyuki Tanaka , Makoto Yatabe , Takeaki Sato , Kazuya Kawamoto
- Applicant: Yoshiyuki Tanaka , Makoto Yatabe , Takeaki Sato , Kazuya Kawamoto
- Applicant Address: JP Kawasaki-shi
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Kawasaki-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP1997-214561 19970808; JP1998-119099 19980428
- Main IPC: G06F12/02
- IPC: G06F12/02

Abstract:
In a memory system using a storage medium, which is inserted into an electronic apparatus via a connector to add a memory function thereto, the storage medium has a GROUND terminal, a power supply terminal a control terminal and a data input/output terminal, and the connector has a function of being sequentially connected to each of the terminals. When the storage medium is inserted into the connector, the GROUND terminal and control terminal of the storage medium are connected to corresponding terminals of the connector before the power supply terminal and data input/output terminal of the storage medium are connected to corresponding terminals of the connector. Thus, it is possible to improve the stability when a memory card is inserted into or ejected from the memory system.
Public/Granted literature
- US20080059695A1 METHOD FOR CONTROLLING NON-VOLATILE SEMICONDUCTOR MEMORY SYSTEM Public/Granted day:2008-03-06
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