Invention Grant
- Patent Title: Memory device and method of multi-bit programming
- Patent Title (中): 多位编程的存储器件和方法
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Application No.: US12155647Application Date: 2008-06-06
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Publication No.: US08230157B2Publication Date: 2012-07-24
- Inventor: Jaehong Kim , Kyoung Lae Cho , Jun Jin Kong , Heeseok Eun , Seung-Hwan Song
- Applicant: Jaehong Kim , Kyoung Lae Cho , Jun Jin Kong , Heeseok Eun , Seung-Hwan Song
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0004147 20080114
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F13/00 ; G06F13/28 ; G06F11/00 ; G06F11/10 ; H03M13/00 ; G11C29/00

Abstract:
Memory devices and multi-bit programming methods are provided. A memory device may include a plurality of memory units; a data separator that separates data into a plurality of groups; a selector that rotates each of the plurality of groups and transmits each of the groups to at least one of the plurality of memory units. The plurality of memory units may include page buffers that may program the transmitted group in a plurality of multi-bit cell arrays using a different order of a page programming operation. Through this, evenly reliable data pages may be generated.
Public/Granted literature
- US20090182934A1 Memory device and method of multi-bit programming Public/Granted day:2009-07-16
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