Invention Grant
- Patent Title: JTAG controlled self-repair after packaging
- Patent Title (中): JTAG控制包装后的自我修复
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Application No.: US13358442Application Date: 2012-01-25
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Publication No.: US08230274B2Publication Date: 2012-07-24
- Inventor: Yoshinori Fujiwara , Masayoshi Nomura
- Applicant: Yoshinori Fujiwara , Masayoshi Nomura
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C17/18 ; G01R31/28

Abstract:
An integrated circuit containing memory includes IEEE 1149.1 (JTAG) controlled self-repair system that permits permanent repair of the memory after the integrated circuit has been packaged. The JTAG controlled self-repair system allows a user to direct circuitry to blow fuses using an externally supplied voltage to electrically couple or isolate components to permanently repair a memory location with JTAG standard TMS and TCK signals. The system may optionally sequentially repair more than one memory location using a repair sequencer.
Public/Granted literature
- US20120120749A1 JTAG CONTROLLED SELF-REPAIR AFTER PACKAGING Public/Granted day:2012-05-17
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