A memory device includes a semiconductor memory including a plurality of memory cells, and a controller including a buffer which temporarily stores data, a data pattern check circuit which checks a predetermined data pattern of data that are stored in the buffer and are to be stored in a plurality of neighboring ones of the memory cells, and sends an address in accordance with a result of the check, and a data correction circuit which corrects a value of data at the address that is sent, and sends the corrected value to the semiconductor memory.