Invention Grant
US08232470B2 Dilute Group III-V nitride intermediate band solar cells with contact blocking layers
有权
具有接触阻挡层的III-V族氮化物中间带太阳能电池的稀释
- Patent Title: Dilute Group III-V nitride intermediate band solar cells with contact blocking layers
- Patent Title (中): 具有接触阻挡层的III-V族氮化物中间带太阳能电池的稀释
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Application No.: US12558446Application Date: 2009-09-11
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Publication No.: US08232470B2Publication Date: 2012-07-31
- Inventor: Wladyslaw Walukiewicz , Kin Man Yu
- Applicant: Wladyslaw Walukiewicz , Kin Man Yu
- Applicant Address: US AZ Phoenix
- Assignee: Rosestreet Labs Energy, Inc.
- Current Assignee: Rosestreet Labs Energy, Inc.
- Current Assignee Address: US AZ Phoenix
- Agency: Greenberg Traurig, LLP
- Main IPC: H01L31/00
- IPC: H01L31/00

Abstract:
An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (VOC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.
Public/Granted literature
- US20100175751A1 Dilute Group III-V Nitride Intermediate Band Solar Cells with Contact Blocking Layers Public/Granted day:2010-07-15
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