Invention Grant
US08232475B2 Nano-hole array in conductor element for improving the contact conductance
有权
导体元件中的纳米孔阵列，用于提高接触电导
- Patent Title: Nano-hole array in conductor element for improving the contact conductance
- Patent Title (中): 导体元件中的纳米孔阵列，用于提高接触电导
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Application No.: US12368755Application Date: 2009-02-10
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Publication No.: US08232475B2Publication Date: 2012-07-31
- Inventor: Jong-Lih Li , Chieh-Hsiung Kuan
- Applicant: Jong-Lih Li , Chieh-Hsiung Kuan
- Applicant Address: TW Daan Chiu, Taipei
- Assignee: National Taiwan University
- Current Assignee: National Taiwan University
- Current Assignee Address: TW Daan Chiu, Taipei
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Priority: TW97136177A 20080919
- Main IPC: H01B5/08
- IPC: H01B5/08
Abstract:
A nano-hole array for improving contact conductance of a conductor element that consists of a first layer and a second layer is provided. The nano-hole array formed between the first and second layers comprises a plurality of holes. The contact conductance of the conductor element is enhanced by reducing the hole size of the hole array, increasing the occupation rate of the hole array, and performing thermal annealing.
Public/Granted literature
- US20100071932A1 NANO-HOLE ARRAY IN CONDUCTOR ELEMENT FOR IMPROVING THE CONTACT CONDUCTANCE Public/Granted day:2010-03-25
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