Invention Grant
US08232538B2 Method and apparatus of halogen removal using optimal ozone and UV exposure
有权
使用最佳的臭氧和紫外线照射来消除卤素的方法和设备
- Patent Title: Method and apparatus of halogen removal using optimal ozone and UV exposure
- Patent Title (中): 使用最佳的臭氧和紫外线照射来消除卤素的方法和设备
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Application No.: US12606528Application Date: 2009-10-27
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Publication No.: US08232538B2Publication Date: 2012-07-31
- Inventor: Sanket Sant , Shang-I Chou
- Applicant: Sanket Sant , Shang-I Chou
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: A61N5/06
- IPC: A61N5/06 ; C23F1/00 ; H01L21/306

Abstract:
A method and apparatus for removing halogen residue from a processed wafer is provided. A wafer is transferred into a processing tool where it is processed in a manner that leaves halogen residue on the wafer. The processed wafer is then moved into a degas chamber where it is treated with UV light and a gas mixture containing at least one of ozone and oxygen to remove the halogen residue. Once treated, the wafer is transferred into an isolation station where it is isolated from the unprocessed wafers for a period of time to allow any remaining residue to dissipate before it is returned to the cassette where it started.
Public/Granted literature
- US20110095207A1 METHOD AND APPARATUS OF HALOGEN REMOVAL USING OPTIMAL OZONE AND UV EXPOSURE Public/Granted day:2011-04-28
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