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US08232552B2 Noncrystalline oxide semiconductor thin film, process for producing the noncrystalline oxide semiconductor thin film, process for producing thin-film transistor, field-effect-transistor, light emitting device, display device, and sputtering target 有权
非晶氧化物半导体薄膜，用于制造非结晶氧化物半导体薄膜的工艺，薄膜晶体管的制造工艺，场效应晶体管，发光器件，显示器件和溅射靶

  • Patent Title: Noncrystalline oxide semiconductor thin film, process for producing the noncrystalline oxide semiconductor thin film, process for producing thin-film transistor, field-effect-transistor, light emitting device, display device, and sputtering target
  • Patent Title (中): 非晶氧化物半导体薄膜，用于制造非结晶氧化物半导体薄膜的工艺，薄膜晶体管的制造工艺，场效应晶体管，发光器件，显示器件和溅射靶
  • Application No.: US12593045
    Application Date: 2008-03-26
  • Publication No.: US08232552B2
    Publication Date: 2012-07-31
  • Inventor: Koki Yano , Kazuyoshi Inoue
  • Applicant: Koki Yano , Kazuyoshi Inoue
  • Applicant Address: JP Tokyo
  • Assignee: Idemitsu Kosan Co., Ltd.
  • Current Assignee: Idemitsu Kosan Co., Ltd.
  • Current Assignee Address: JP Tokyo
  • Agency: Millen, White, Zelano & Branigan PC
  • Priority: JP2007-078996 20070326
  • International Application: PCT/JP2008/055634 WO 20080326
  • International Announcement: WO2008/117810 WO 20081002
  • Main IPC: H01L29/10
  • IPC: H01L29/10 ;  H01L29/12
Noncrystalline oxide semiconductor thin film, process for producing the noncrystalline oxide semiconductor thin film, process for producing thin-film transistor, field-effect-transistor, light emitting device, display device, and sputtering target
Abstract:
This invention provides an amorphous oxide semiconductor thin film, which is insoluble in a phosphoric acid-based etching solution and is soluble in an oxalic acid-based etching solution by optimizing the amounts of indium, tin, and zinc, a method of producing the amorphous oxide semiconductor thin film, etc. An image display device (1) comprises a glass substrate (10), a liquid crystal (40) as a light control element, a bottom gate-type thin film transistor (1) for driving the liquid crystal (40), a pixel electrode (30), and an opposing electrode (50). The amorphous oxide semiconductor thin film (2) in the bottom gate-type thin film transistor (1) has a carrier density of less than 10+18 cm−3, is insoluble in a phosphoric acid-based etching liquid, and is soluble in an oxalic acid-based etching liquid.
Abstract(Chinese):

本发明提供一种无定形氧化物半导体薄膜，其通过优化铟，锡和锌的量而不溶于基于磷酸的蚀刻溶液，并且可溶于草酸蚀刻溶液中，制备无定形氧化物半导体薄膜的方法 氧化物半导体薄膜等。图像显示装置（1）包括玻璃基板（10），作为光控制元件的液晶（40），用于驱动液晶的底栅型薄膜晶体管（1） （40），像素电极（30）和对置电极（50）。 底栅型薄膜晶体管（1）中的非晶氧化物半导体薄膜（2）的载流子密度小于10 + 18cm-3，不溶于磷酸类蚀刻液，并且可溶于 草酸蚀刻液。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02 .按其半导体本体的特征区分的
H01L29/06 ..按其形状区分的；按各半导体区域的形状、相对尺寸或配置区分的
H01L29/10 ...具有连接到1个不通有待整流、放大或切换的电流的电极上去的半导体区域的；并且这样的电极又是包含3个或更多个电极的半导体器件的组成部分的
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