Invention Grant
- Patent Title: Light-emitting diode in semiconductor material
- Patent Title (中): 半导体材料中的发光二极管
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Application No.: US12503248Application Date: 2009-07-15
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Publication No.: US08232560B2Publication Date: 2012-07-31
- Inventor: Ivan-Christophe Robin , Pierre Ferret , Johan Rothman
- Applicant: Ivan-Christophe Robin , Pierre Ferret , Johan Rothman
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR0855272 20080731
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L29/26 ; H01L31/12 ; H01L33/00 ; H01L29/06 ; H01L29/12 ; H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109 ; H01L29/22 ; H01L29/739

Abstract:
A light-emitting diode including: a structure in a semiconductor material of first conductivity type, wherein the structure has a first face of which a first region is in contact with a pad of semiconductor material having a second conductivity type opposite the first conductivity type, and the diode further includes a first electric contact on the pad, a second electric contact-on the first face or on a second face of the structure, and a gate in electrically conductive material arranged on a second region of the first face and separated from the first face by an electrically insulating layer.
Public/Granted literature
- US20100025654A1 LIGHT-EMITTING DIODE IN SEMICONDUCTOR MATERIAL AND ITS FABRICATION METHOD Public/Granted day:2010-02-04
Information query
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