Invention Grant
US08232560B2 Light-emitting diode in semiconductor material 有权
半导体材料中的发光二极管

Light-emitting diode in semiconductor material
Abstract:
A light-emitting diode including: a structure in a semiconductor material of first conductivity type, wherein the structure has a first face of which a first region is in contact with a pad of semiconductor material having a second conductivity type opposite the first conductivity type, and the diode further includes a first electric contact on the pad, a second electric contact-on the first face or on a second face of the structure, and a gate in electrically conductive material arranged on a second region of the first face and separated from the first face by an electrically insulating layer.
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