Invention Grant
US08232589B2 Semiconductor integrated circuit device with reduced leakage current
有权
具有减小漏电流的半导体集成电路器件
- Patent Title: Semiconductor integrated circuit device with reduced leakage current
- Patent Title (中): 具有减小漏电流的半导体集成电路器件
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Application No.: US13352142Application Date: 2012-01-17
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Publication No.: US08232589B2Publication Date: 2012-07-31
- Inventor: Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
- Applicant: Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Stites & Harbison, PLLC
- Agent Juan Carlos A. Marquez, Esq
- Priority: JP2001-168945 20010605; JP2002-017840 20020128
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L21/8242
Abstract:
The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.
Public/Granted literature
- US20120113709A1 Semiconductor Integrated Circuit Device with Reduced Leakage Current Public/Granted day:2012-05-10
Information query
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