Invention Grant
- Patent Title: Power semiconductor device
- Patent Title (中): 功率半导体器件
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Application No.: US12714002Application Date: 2010-02-26
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Publication No.: US08232593B2Publication Date: 2012-07-31
- Inventor: Wataru Saito , Syotaro Ono , Hiroshi Ohta , Munehisa Yabuzaki , Nana Hatano , Miho Watanabe
- Applicant: Wataru Saito , Syotaro Ono , Hiroshi Ohta , Munehisa Yabuzaki , Nana Hatano , Miho Watanabe
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2009-63123 20090316
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06

Abstract:
A power semiconductor device according to an embodiment of the present invention includes a first semiconductor layer of a first or second conductivity type, a second semiconductor layer of the first conductivity type formed on the first semiconductor layer, a third semiconductor layer of the second conductivity type selectively formed on a surface of the second semiconductor layer, at least one trench formed in a periphery of the third semiconductor layer on the surface of the second semiconductor layer, a depth of a bottom surface of the at least one trench being deeper than a bottom surface of the third semiconductor layer, and shallower than a top surface of the first semiconductor layer, and some or all of the at least one trench being in contact with a side surface of the third semiconductor layer, at least one insulator buried in the at least one trench, a first main electrode electrically connected to the first semiconductor layer, and a second main electrode electrically connected to the third semiconductor layer.
Public/Granted literature
- US20100230745A1 POWER SEMICONDUCTOR DEVICE Public/Granted day:2010-09-16
Information query
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