Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12643458Application Date: 2009-12-21
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Publication No.: US08232594B2Publication Date: 2012-07-31
- Inventor: Hyun-Tae Kim
- Applicant: Hyun-Tae Kim
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2008-0137578 20081230
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336 ; H01L21/762
Abstract:
A semiconductor device includes an isolation layer formed on and/or over a semiconductor substrate to define an isolation layer, a drift area formed in an active area separated by the isolation layer, a pad nitride layer pattern formed in a form of a plate on the drift area, and a gate electrode having step difference between lateral sides thereof due to the pad nitride layer pattern.
Public/Granted literature
- US20100163980A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-07-01
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