Invention Grant
- Patent Title: Structure and process for metallization in high aspect ratio features
- Patent Title (中): 高纵横比特征金属化的结构和工艺
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Application No.: US12034708Application Date: 2008-02-21
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Publication No.: US08232647B2Publication Date: 2012-07-31
- Inventor: Chih-Chao Yang , Fenton R. McFeely
- Applicant: Chih-Chao Yang , Fenton R. McFeely
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Katherine S. Brown, Esq.
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
A high aspect ratio metallization structure is provided in which a noble metal-containing material is present at least within a lower portion of a contact opening located in a dielectric material and is in direct contact with a metal semiconductor alloy located on an upper surface of a material stack of at least one semiconductor device. In one embodiment, the noble metal-containing material is plug located within the lower region of the contact opening and an upper region of the contact opening includes a conductive metal-containing material. The conductive metal-containing material is separated from plug of noble metal-containing material by a bottom walled portion of a U-shaped diffusion barrier. In another embodiment, the noble metal-containing material is present throughout the entire contact opening.
Public/Granted literature
- US20090212433A1 STRUCTURE AND PROCESS FOR METALLIZATION IN HIGH ASPECT RATIO FEATURES Public/Granted day:2009-08-27
Information query
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