Invention Grant
US08232659B2 Three dimensional IC device and alignment methods of IC device substrates
有权
IC器件基板的三维IC器件和对准方法
- Patent Title: Three dimensional IC device and alignment methods of IC device substrates
- Patent Title (中): IC器件基板的三维IC器件和对准方法
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Application No.: US12048015Application Date: 2008-03-13
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Publication No.: US08232659B2Publication Date: 2012-07-31
- Inventor: Hsueh-Chung Chen , Chine-Gie Lou , Su-Chen Fan
- Applicant: Hsueh-Chung Chen , Chine-Gie Lou , Su-Chen Fan
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L23/34

Abstract:
Alignment methods of IC device substrates. A first IC device substrate has a first front side for defining a plurality of first IC features, a first backside opposite the first front side, and a first alignment pattern formed on the first front side or the first backside. A second IC device substrate has a second front side for defining a plurality of second IC features, a second backside opposite the second front side, and a second alignment pattern formed on the second front side or the second backside. A first optical detector and a second optical detector are applied to detect the first and second alignment patterns, so as to align the first and second IC device substrates. Specifically, the first and second alignment patterns face toward the first and second optical detectors in opposite directions.
Public/Granted literature
- US20080157407A1 THREE DIMENSIONAL IC DEVICE AND ALIGNMENT METHODS OF IC DEVICE SUBSTRATES Public/Granted day:2008-07-03
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