Invention Grant
- Patent Title: Semiconductor switch
- Patent Title (中): 半导体开关
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Application No.: US12726528Application Date: 2010-03-18
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Publication No.: US08232827B2Publication Date: 2012-07-31
- Inventor: Yoshitomo Sagae , Toshiki Seshita
- Applicant: Yoshitomo Sagae , Toshiki Seshita
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2009-200647 20090831
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
A semiconductor switch includes: a first terminal; a second terminal; a switch section including a through FET connected between the first terminal and the second terminal and a shunt FET connected between the second terminal and a first ground terminal; a first control terminal configured to drive the through FET; a second control terminal configured to drive the shunt FET; and a driver provided on a substrate together with the switch section and configured to provide a differential output to the first control terminal and the second control terminal.
Public/Granted literature
- US20110050288A1 SEMICONDUCTOR SWITCH Public/Granted day:2011-03-03
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