Invention Grant
US08233065B2 Charge detection device and charge detection method, solid-state imaging device and driving method thereof, and imaging device
失效
充电检测装置和电荷检测方法，固态成像装置及其驱动方法和成像装置
- Patent Title: Charge detection device and charge detection method, solid-state imaging device and driving method thereof, and imaging device
- Patent Title (中): 充电检测装置和电荷检测方法，固态成像装置及其驱动方法和成像装置
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Application No.: US12656001Application Date: 2010-01-13
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Publication No.: US08233065B2Publication Date: 2012-07-31
- Inventor: Shunsuke Kameda , Nobuhiro Karasawa
- Applicant: Shunsuke Kameda , Nobuhiro Karasawa
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader Fishman & Grauer, PLLC
- Priority: JP2009-028892 20090210
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H04N5/335
Abstract:
A charge detection device includes: a substrate having a first conductive type of predetermined region; a second conductive type of drain region disposed in the predetermined region of the substrate; a second conductive type of source region disposed in the predetermined region of the substrate; a second conductive type of channel region disposed between the drain region and the source region; a gate formed via an insulating film on the channel region; a second conductive type of charge accumulation region disposed in the predetermined region of the substrate and changing a threshold voltage of a transistor having the drain region, the source region, and the gate by accumulating signal charges as a target to be measured; a first conductive type of channel barrier region disposed between the channel region and the charge accumulation region; and a charge sweep region sweeping away the signal charges accumulated in the charge accumulation region.
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