Invention Grant
- Patent Title: Power supply circuit, overcurrent protection circuit for the same, and electronic device
- Patent Title (中): 电源电路,过流保护电路相同,电子设备
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Application No.: US12369907Application Date: 2009-02-12
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Publication No.: US08233257B2Publication Date: 2012-07-31
- Inventor: Morihito Hasegawa , Hidenobu Ito , Kwok Fai Hui , Toshihiko Kasai , Katsuyuki Yasukouchi
- Applicant: Morihito Hasegawa , Hidenobu Ito , Kwok Fai Hui , Toshihiko Kasai , Katsuyuki Yasukouchi
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Priority: JP2008-031330 20080213
- Main IPC: H02H9/08
- IPC: H02H9/08

Abstract:
A power supply circuit includes an output transistor including a source coupled to power supply voltage, and a drain from which output voltage is outputted; a first error amplifier powered by the power supply voltage and outputting a signal based on a potential difference between the output voltage and a reference voltage; a buffer transistor including a gate coupled to the output of the first error amplifier, and a source coupled via a constant current source to the power supply voltage and coupled to a gate of the output transistor; a current detection transistor coupled to the output transistor such that a gate and source are shared; and an overcurrent protection circuit configured to limit the drain current of the buffer transistor based on the increase of the drain current of the current detection transistor and thereby control the output current of the output transistor.
Public/Granted literature
- US08203817B2 Power supply circuit, overcurrent protection circuit for the same, and electronic device Public/Granted day:2012-06-19
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