Invention Grant
- Patent Title: NAND flash memory
- Patent Title (中): NAND闪存
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Application No.: US13108641Application Date: 2011-05-16
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Publication No.: US08233325B2Publication Date: 2012-07-31
- Inventor: Kiyofumi Sakurai , Takuya Futatsuyama
- Applicant: Kiyofumi Sakurai , Takuya Futatsuyama
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-184056 20080715
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04

Abstract:
A method of controlling a programming of a flash memory with memory blocks. The method includes checking whether a selected block among the memory blocks belongs to a first group or a second group. The method further includes executing the programming from a least bit address when the selected block belongs to the first group. The method also includes executing the programming from a most bit address when the selected block belongs to the second group.
Public/Granted literature
- US20110216593A1 NAND FLASH MEMORY Public/Granted day:2011-09-08
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