Invention Grant
- Patent Title: Method and structure for SRAM cell trip voltage measurement
- Patent Title (中): SRAM单元跳闸电压测量的方法和结构
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Application No.: US12584220Application Date: 2009-09-01
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Publication No.: US08233341B2Publication Date: 2012-07-31
- Inventor: Xiaowei Deng , Wah Kit Loh
- Applicant: Xiaowei Deng , Wah Kit Loh
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Rose Alyssa Keagy; Wade J. Brady, III; Frederick J. Telecky, Jr
- Main IPC: G11C29/50
- IPC: G11C29/50

Abstract:
A parametric test circuit is disclosed (FIG. 6). The test circuit includes a latch circuit having true and complementary terminals. A first access transistor (206) has a current path connected between the true terminal and a first access terminal (214) and has a first control terminal. A second access transistor (208) has a current path connected between the complementary terminal and a second access terminal (216) and has a second control terminal connected to the first control terminal. A first pass gate (604) has a current path connected between the first access terminal (214) and a third access terminal (XBLT) and has a third control terminal. A second pass gate (606) has a current path connected between the second access terminal (216) and a fourth access terminal (XBLB) and has a fourth control terminal connected to the third control terminal.
Public/Granted literature
- US20110051540A1 Method and structure for SRAM cell trip voltage measurement Public/Granted day:2011-03-03
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