Invention Grant
- Patent Title: Semiconductor memory, semiconductor device, and system
- Patent Title (中): 半导体存储器,半导体器件和系统
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Application No.: US12631353Application Date: 2009-12-04
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Publication No.: US08233347B2Publication Date: 2012-07-31
- Inventor: Toshikazu Nakamura , Atsushi Takeuchi , Atsushi Nakakubo
- Applicant: Toshikazu Nakamura , Atsushi Takeuchi , Atsushi Nakakubo
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox LLP
- Priority: JP2008-312563 20081208
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C8/00

Abstract:
A semiconductor memory includes: a voltage supply circuit which supplies a first voltage to a word line when an internal circuit is in a standby state, and supplies a second voltage higher than the first voltage to the word line when the internal circuit is in an active state; and a control circuit changes a drive capacity of the voltage supply circuit when changing from the standby state to the active state and the second voltage is supplied to the word line.
Public/Granted literature
- US20100142306A1 SEMICONDUCTOR MEMORY, SEMICONDUCTOR DEVICE, AND SYSTEM Public/Granted day:2010-06-10
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