Invention Grant
US08233967B2 Method for marking and visualizing an implant by way of an x-ray phase-contrast tomography examination and an implant
有权
通过x射线相位层析成像检查和植入物来标记和可视化植入物的方法
- Patent Title: Method for marking and visualizing an implant by way of an x-ray phase-contrast tomography examination and an implant
- Patent Title (中): 通过x射线相位层析成像检查和植入物来标记和可视化植入物的方法
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Application No.: US12222505Application Date: 2008-08-11
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Publication No.: US08233967B2Publication Date: 2012-07-31
- Inventor: Eckhard Hempel , Martin Hoheisel , Stefan Popescu , Rainer Raupach
- Applicant: Eckhard Hempel , Martin Hoheisel , Stefan Popescu , Rainer Raupach
- Applicant Address: DE Munich
- Assignee: Siemens Aktiengesellschaft
- Current Assignee: Siemens Aktiengesellschaft
- Current Assignee Address: DE Munich
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: DE102007038381 20070814
- Main IPC: G01N23/02
- IPC: G01N23/02

Abstract:
A method is disclosed for marking and visualizing an implant by use of an x-ray phase-contrast tomography examination. Further, an implant is also disclosed. In at least one embodiment, implants are used with specific characteristics which are as unambiguous as possible with regard to the phase shift generated by the implants in a phase-contrast tomography examination. In at least one embodiment, these specific characteristics can include the typical self-generated specific phase shift, typical differences in the specific phase-shift values, or typical spatial structures of materials with well-defined phase-shift values.
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